E6D10065G

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Wolfspeed

WOLFSPEED SIC, SCHOTTKY DIODE

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Wolfspeed

WOLFSPEED SIC, SCHOTTKY DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	E6D10065G

Capacitance @ Vr, F	630 pF
Current - Average Rectified (Io)	32 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-263-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Mounting Type	Reverse Recovery Time (trr)	Supplier Device Package	Technology	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Grade	Qualification
Wolfspeed E6D10065G	1.5 V	50 µA	32 A	175 ░C	-55 C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	0 ns	TO-263-2	SiC (Silicon Carbide) Schottky	No Recovery Time	650 V	630 pF
Wolfspeed E6D10065A	1.5 V	50 µA	34 A	175 ░C	-55 C	TO-220-2	Through Hole	0 ns	TO-220-2	SiC (Silicon Carbide) Schottky	No Recovery Time	650 V	630 pF	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 32A Surface Mount TO-263-2

Technical documentation and resources