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DMN2400UFB4-7 - Package Image for X2-DFN1006-3

DMN2400UFB4-7

NRND
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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Search across all available documentation for this part.

DMN2400UFB4-7 - Package Image for X2-DFN1006-3

DMN2400UFB4-7

NRND
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2400UFB4-7
Current - Continuous Drain (Id) @ 25°C750 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.5 nC
Input Capacitance (Ciss) (Max) @ Vds36 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max) [Max]470 mW
Rds On (Max) @ Id, Vgs550 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.28
10$ 0.17
100$ 0.11
500$ 0.08
1000$ 0.07
Digi-Reel® 1$ 0.28
10$ 0.17
100$ 0.11
500$ 0.08
1000$ 0.07
Tape & Reel (TR) 3000$ 0.06
6000$ 0.05
9000$ 0.05
15000$ 0.05
21000$ 0.04
30000$ 0.04
75000$ 0.04
150000$ 0.04

Description

General part information

DMN2400UFB4 Series

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.