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Description

General part information

NTE2306

Bipolar (BJT) Transistor PNP 160 V 16 A 1MHz 125 W Through Hole TO-3PN

Technical Specifications

Parameters and characteristics for this part

SpecificationNTE2306
Current - Collector (Ic) (Max)16 A
Current - Collector Cutoff (Max)750 µA
DC Current Gain (hFE) (Min)15
Frequency - Transition1 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-3P-3, SC-65-3
Package NameTO-3PN
Power - Max125 W
Transistor TypePNP
Vce Saturation (Max)3.5 V
Voltage - Collector Emitter Breakdown (Max)160 V

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