Zenode.ai Logo
Beta
K

ISC0604NLSATMA1

Active
Infineon Technologies

TRENCH 40<-<100V

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

ISC0604NLSATMA1

Active
Infineon Technologies

TRENCH 40<-<100V

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationISC0604NLSATMA1
Current - Continuous Drain (Id) @ 25°C22 A, 166 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]78 nC
Input Capacitance (Ciss) (Max) @ Vds6800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)139 W, 2.5 W
Rds On (Max) @ Id, Vgs [Max]2.8 mOhm
Supplier Device PackagePG-TDSON-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 5000$ 1.18

Description

General part information

ISC0604 Series

OptiMOS™ PD power MOSFETis Infineon’s portfolio optimized for synchronous rectification in USB fast charger and power adapter SMPS applications. This ISC0604NLS in SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.

Documents

Technical documentation and resources