ISC0604NLSATMA1
ActiveInfineon Technologies
TRENCH 40<-<100V
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ISC0604NLSATMA1
ActiveInfineon Technologies
TRENCH 40<-<100V
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC0604NLSATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A, 166 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 78 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 139 W, 2.5 W |
| Rds On (Max) @ Id, Vgs [Max] | 2.8 mOhm |
| Supplier Device Package | PG-TDSON-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 5000 | $ 1.18 | |
Description
General part information
ISC0604 Series
OptiMOS™ PD power MOSFETis Infineon’s portfolio optimized for synchronous rectification in USB fast charger and power adapter SMPS applications. This ISC0604NLS in SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.
Documents
Technical documentation and resources