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ONSEMI NGTB45N60SWG

NGTB30N135IHRWG

Obsolete
ON Semiconductor

TRANS IGBT CHIP N-CH 1350V 60A 394W 3-PIN(3+TAB) TO-247 TUBE

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ONSEMI NGTB45N60SWG

NGTB30N135IHRWG

Obsolete
ON Semiconductor

TRANS IGBT CHIP N-CH 1350V 60A 394W 3-PIN(3+TAB) TO-247 TUBE

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Description

General part information

NGTB30N135IHRWG

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationNGTB30N135IHRWG
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)120 A
Gate Charge234 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-247-3
Package NameTO-247
Power - Max394 W
Switching Energy850 µJ
Switching Energy (Off)850 µJ
Td (off) @ 25°C250 ns
Test Condition Current30 A
Test Condition Resistance10 Ohm
Test Condition Voltage600 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)2.65 V
Voltage - Collector Emitter Breakdown (Max)1350 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part