2N7000

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STMicroelectronics

MOSFET N-CH 60V 350MA TO92-3

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STMicroelectronics

MOSFET N-CH 60V 350MA TO92-3

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	2N7000	2N70 Series

Current - Continuous Drain (Id) @ 25°C	350 mA	200 - 350 mA
Drain to Source Voltage (Vdss)	60 V	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V	4.5 - 10 V
FET Type	N-Channel	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	43 pF	43 pF
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3, SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1 W	1 W
Power Dissipation (Max)	-	350 mW
Rds On (Max) @ Id, Vgs	5 Ohm	5 Ohm
Supplier Device Package	TO-92-3	TO-92-3, SOT-23-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	18 V	18 V
Vgs(th) (Max) @ Id	3 V	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

MOSFET N-CH 60V 350MA TO92-3

Part	Technology	Mounting Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
STMicroelectronics 2N7000	MOSFET (Metal Oxide)	Through Hole	TO-226-3, TO-92-3	4.5 V, 10 V	1 W	TO-92-3	43 pF	N-Channel	3 V	-55 °C	150 °C	5 Ohm	18 V	350 mA	60 V
STMicroelectronics 2N7002	MOSFET (Metal Oxide)	Surface Mount	SC-59, SOT-23-3, TO-236-3	4.5 V, 10 V		SOT-23-3	43 pF	N-Channel	3 V	-55 °C	150 °C	5 Ohm	18 V	200 mA	60 V	350 mW

General part information

N-Channel 60 V 350mA (Tc) 1W (Tc) Through Hole TO-92-3

Technical documentation and resources