FDB2552
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 150V, 37A, 36MΩ
FDB2552
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 150V, 37A, 36MΩ
Description
General part information
FDB2552
N-Channel PowerTrench®MOSFET 150V, 37A, 36mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDB2552 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 5 A, 5 A |
| Current - Continuous Drain (Id) (Tc) | 37 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 51 nC |
| Input Capacitance (Ciss) (Max) | 2800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263 (D2PAK) |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) | 36 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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