FDN361BN
ObsoleteN-CHANNEL, LOGIC LEVEL, POWERTRENCH<SUP>®</SUP> MOSFET 30V, 1.4A, 110MΩ
FDN361BN
ObsoleteN-CHANNEL, LOGIC LEVEL, POWERTRENCH<SUP>®</SUP> MOSFET 30V, 1.4A, 110MΩ
Description
General part information
FDN361BN
These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDN361BN |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.4 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 1.8 nC |
| Input Capacitance (Ciss) (Max) | 193 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 155 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power Dissipation (Max) | 500 mW |
| Rds On (Max) | 110 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources