IRFS7534TRLPBF

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Infineon Technologies

MOSFET TRANSISTOR, N CHANNEL, 195 A, 60 V, 0.002 OHM, 10 V, 3.7 V ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET TRANSISTOR, N CHANNEL, 195 A, 60 V, 0.002 OHM, 10 V, 3.7 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS7534TRLPBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	279 nC
Input Capacitance (Ciss) (Max) @ Vds	10034 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	294 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRFS7534TRL7PP	N-Channel	9990 pF	60 V	290 W	D2PAK (7-Lead)	20 V	3.7 V	300 nC	6 V 10 V	Surface Mount	1.95 mOhm	240 A	D2PAK TO-263-7	-55 °C	175 ░C	MOSFET (Metal Oxide)
Infineon Technologies IRFS7534TRLPBF	N-Channel	10034 pF	60 V	294 W	PG-TO263-7	20 V	3.7 V		6 V 10 V	Surface Mount	2.4 mOhm	195 A	D2PAK TO-263-7	-55 °C	175 ░C	MOSFET (Metal Oxide)	279 nC

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