FGHL40T65MQDT
ActiveIGBT - 650 V 40 A FS4 MEDIUM SWITCHING SPEED IGBT WITH FULL RATED COPACK DIODE
FGHL40T65MQDT
ActiveIGBT - 650 V 40 A FS4 MEDIUM SWITCHING SPEED IGBT WITH FULL RATED COPACK DIODE
Description
General part information
FGHL40T65MQDT
ON Semiconductor's series of field stop 4th generation IGBTs offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other hi performance power conversion applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | FGHL40T65MQDT |
|---|---|
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Gate Charge | 80 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power - Max | 238 W |
| Reverse Recovery Time (trr) | 86 ns |
| Switching Energy (Off) | 490 µJ |
| Switching Energy (On) | 880 µJ |
| Td (off) @ 25°C | 75 ns |
| Td (on) @ 25°C | 18 ns |
| Test Condition Current | 40 A |
| Test Condition Resistance | 6 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
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Documents
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