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DMN10H220L-7

DMN10H220L-7

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 100 V, 1.4 A, 0.22 OHM, SOT-23, SURFACE MOUNT

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DMN10H220L-7

DMN10H220L-7

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 100 V, 1.4 A, 0.22 OHM, SOT-23, SURFACE MOUNT

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Description

General part information

DMN10H220L Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications,

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN10H220L-7
Current - Continuous Drain (Id) (Ta)1.4 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)8.3 nC
Input Capacitance (Ciss) (Max)401 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3
Power Dissipation (Max)1.3 W
Rds On (Max)220 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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