BSN20-7

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Diodes Inc

POWER MOSFET, N CHANNEL, 50 V, 500 MA, 1.8 OHM, SOT-23, 3 PINS, SURFACE MOUNT

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Active

Diodes Inc

POWER MOSFET, N CHANNEL, 50 V, 500 MA, 1.8 OHM, SOT-23, 3 PINS, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	BSN20-7

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.8 nC
Input Capacitance (Ciss) (Max) @ Vds	40 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	600 mW
Rds On (Max) @ Id, Vgs [Max]	1.8 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

N-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max) [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C
Diodes Inc BSN20-7	600 mW	20 V	4.5 V 10 V	50 V	Surface Mount	40 pF	MOSFET (Metal Oxide)	0.8 nC	SOT-23-3	-55 °C	150 °C	N-Channel	1.5 V	1.8 Ohm	SC-59 SOT-23-3 TO-236-3	500 mA

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General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources