DMJ65H650SCTI

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Search across all available documentation for this part.

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Technical Specifications

Parameters and characteristics for this part

Specification	DMJ65H650SCTI

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.9 nC
Input Capacitance (Ciss) (Max) @ Vds	639 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	ITO-220AB (Type TH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

NRND = Not Recommended for New Design

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Technology	Power Dissipation (Max)
Diodes Inc DMJ65H650SCTI	ITO-220AB (Type TH)	12.9 nC	N-Channel	10 A	4 V	10 V	Through Hole	600 mOhm	30 V	-55 °C	150 °C	639 pF	650 V	TO-220-3 Full Pack Isolated Tab	MOSFET (Metal Oxide)	31 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.