FQD13N06TM
ObsoletePOWER MOSFET, N-CHANNEL, QFET<SUP>®</SUP>, 60 V, 10 A, 140 MΩ, DPAK
FQD13N06TM
ObsoletePOWER MOSFET, N-CHANNEL, QFET<SUP>®</SUP>, 60 V, 10 A, 140 MΩ, DPAK
Description
General part information
FQD13N06TM
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | FQD13N06TM |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 10 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 7.5 nC |
| Input Capacitance (Ciss) (Max) | 310 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252AA |
| Power Dissipation (Max) | 28 W, 2.5 W |
| Rds On (Max) | 140 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources