
IST006N04NM6AUMA1
ActiveOPTIMOS™ 6 N-CHANNEL POWER MOSFET 40 V ; STOLL HSOF-5 PACKAGE; 0.6 MOHM;
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IST006N04NM6AUMA1
ActiveOPTIMOS™ 6 N-CHANNEL POWER MOSFET 40 V ; STOLL HSOF-5 PACKAGE; 0.6 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IST006N04NM6AUMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 475 A, 58 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 178 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 5-PowerSFN |
| Power Dissipation (Max) | 250 W, 3.8 W |
| Rds On (Max) @ Id, Vgs | 0.6 mOhm |
| Supplier Device Package | PG-HSOF-5-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IST006 Series
TheOptiMOS™ 6 power MOSFET40V insTOLLpackage features very low RDS(on)of 0.60mOhm and 475A high current capability. It has the advantages of Infineon’s well-known quality level for robust industry packages making it the ideal solution for various performance in battery powered applications, battery protection and battery formation. The improved RDS(on)and IDratings, continuous and pulsed, enable increased battery run time and higher power density.
Documents
Technical documentation and resources