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IST006N04NM6AUMA1 - IST011N06NM5AUMA1

IST006N04NM6AUMA1

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Infineon Technologies

OPTIMOS™ 6 N-CHANNEL POWER MOSFET 40 V ; STOLL HSOF-5 PACKAGE; 0.6 MOHM;

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Search across all available documentation for this part.

IST006N04NM6AUMA1 - IST011N06NM5AUMA1

IST006N04NM6AUMA1

Active
Infineon Technologies

OPTIMOS™ 6 N-CHANNEL POWER MOSFET 40 V ; STOLL HSOF-5 PACKAGE; 0.6 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIST006N04NM6AUMA1
Current - Continuous Drain (Id) @ 25°C475 A, 58 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]178 nC
Input Capacitance (Ciss) (Max) @ Vds8800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case5-PowerSFN
Power Dissipation (Max)250 W, 3.8 W
Rds On (Max) @ Id, Vgs0.6 mOhm
Supplier Device PackagePG-HSOF-5-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.26
10$ 2.81
100$ 1.99
500$ 1.63
1000$ 1.52
Digi-Reel® 1$ 4.26
10$ 2.81
100$ 1.99
500$ 1.63
1000$ 1.52
Tape & Reel (TR) 2000$ 1.52
NewarkEach (Supplied on Cut Tape) 1$ 3.31
10$ 2.49
25$ 2.26
50$ 2.03
100$ 1.80
250$ 1.67
500$ 1.55
1000$ 1.48

Description

General part information

IST006 Series

TheOptiMOS™ 6 power MOSFET40V insTOLLpackage features very low RDS(on)of 0.60mOhm and 475A high current capability. It has the advantages of Infineon’s well-known quality level for robust industry packages making it the ideal solution for various performance in battery powered applications, battery protection and battery formation. The improved RDS(on)and IDratings, continuous and pulsed, enable increased battery run time and higher power density.

Documents

Technical documentation and resources