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DMP4026LSSQ-13 - Package Image for SO-8

DMP4026LSSQ-13

Active
Diodes Inc

40V P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP4026LSSQ-13 - Package Image for SO-8

DMP4026LSSQ-13

Active
Diodes Inc

40V P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP4026LSSQ-13
Current - Continuous Drain (Id) @ 25°C7.2 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]45 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2083 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)1.5 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs25 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.27
5000$ 0.25
7500$ 0.24
12500$ 0.22
17500$ 0.22

Description

General part information

DMP4026LSSQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, backlighting, DC-DC converters, and printer equipment.