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DMP4026LSSQ-13

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Diodes Inc

40V P-CHANNEL ENHANCEMENT MODE MOSFET

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Package Image for SO-8

DMP4026LSSQ-13

Active
Diodes Inc

40V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

General part information

DMP4026LSSQ-13

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, backlighting, DC-DC converters, and printer equipment.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP4026LSSQ-13
Current - Continuous Drain (Id) (Ta)7.2 A, 7.2 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)45 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2083 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SOIC, 8-SO
Package Width3.9 mm
Power Dissipation (Max)1.5 W
QualificationAEC-Q101
Rds On (Max)25 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)1.8 V

Pricing

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CAD

3D models and CAD resources for this part