NTLJD3115PT1G
ActiveON Semiconductor
DUAL MOSFET, P CHANNEL, 20 V, 20 V, 3.3 A, 3.3 A, 0.075 OHM
NTLJD3115PT1G
ActiveON Semiconductor
DUAL MOSFET, P CHANNEL, 20 V, 20 V, 3.3 A, 3.3 A, 0.075 OHM
Description
General part information
NTLJD3115P Series
Power MOSFET -20 V, -4.1 A, µCool™ Dual P-Channel, 2x2 mm WDFN Package
Technical Specifications
Parameters and characteristics for this part
| Specification | NTLJD3115PT1G |
|---|---|
| Channel Count | 2 |
| Configuration | P-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 2.3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 6.2 nC |
| Input Capacitance (Ciss) (Max) | 531 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-WDFN Exposed Pad |
| Package Length | 2 mm |
| Package Name | 6-WDFN |
| Package Width | 2 mm |
| Power - Max | 710 mW |
| Rds On (Max) | 100 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1 V |
Pricing
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