EPC7014UBC

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EPC Space, LLC

GAN FET HEMT 60V 1A COTS 4UB

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EPC Space, LLC

GAN FET HEMT 60V 1A COTS 4UB

Technical Specifications

Parameters and characteristics for this part

Specification	EPC7014UBC

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	22 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SMD, No Lead
Rds On (Max) @ Id, Vgs [Max]	580 mOhm
Supplier Device Package	4-SMD
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	7 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	2.5 V

GAN FET HEMT 60V 1A COTS 4UB

Part	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
EPC Space, LLC EPC7014UBC	2.5 V	N-Channel	5 V	-55 °C	150 °C	580 mOhm	60 V	GaNFET (Gallium Nitride)	Surface Mount	-4 V	7 V	4-SMD, No Lead	1 A	4-SMD	22 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 1A (Tc) Surface Mount 4-SMD

Technical documentation and resources