IRF7780MTRPBF

Obsolete

Infineon Technologies

MOSFET N-CH 75V 89A DIRECTFET

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 75V 89A DIRECTFET

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7780MTRPBF

Current - Continuous Drain (Id) @ 25°C	89 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	186 nC
Input Capacitance (Ciss) (Max) @ Vds	6504 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	DirectFET™ Isometric ME
Power Dissipation (Max)	96 W
Rds On (Max) @ Id, Vgs	5.7 mOhm
Supplier Device Package	DirectFET™ Isometric ME
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Infineon Technologies IRF7780MTRPBF	DirectFET™ Isometric ME	96 W	89 A	20 V	186 nC	MOSFET (Metal Oxide)	3.7 V	6504 pF	6 V 10 V	DirectFET™ Isometric ME	N-Channel	Surface Mount	75 V	-55 °C	150 °C	5.7 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$