2N3019

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STMicroelectronics

TRANS NPN 80V 1A TO39

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STMicroelectronics

TRANS NPN 80V 1A TO39

Technical Specifications

Parameters and characteristics for this part

Specification	2N3019

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-39-3 Metal Can, TO-205AD
Power - Max [Max]	800 mW
Supplier Device Package	TO-39
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

TRANS NPN 80V 1A TO39

Part	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Transistor Type	Power - Max [Max]	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]
STMicroelectronics 2N3019	TO-205AD, TO-39-3 Metal Can	Through Hole	500 mV	0.01 µA	NPN	800 mW	TO-39	100 MHz	100	175 °C	80 V	1 A

General part information

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 800 mW Through Hole TO-39

Technical documentation and resources