H11F3VM
ActiveOPTOCOUPLER DC-IN 1-CH PHOTO FET DC-OUT 6-PIN PDIP BAG
H11F3VM
ActiveOPTOCOUPLER DC-IN 1-CH PHOTO FET DC-OUT 6-PIN PDIP BAG
Description
General part information
H11F3VM
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
Technical Specifications
Parameters and characteristics for this part
| Specification | H11F3VM |
|---|---|
| Current - DC Forward (If) (Max) | 60 mA |
| Input Type | DC |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Operating Temperature (Max) | 100 °C |
| Operating Temperature (Min) | -40 °C |
| Output Type | MOSFET |
| Package Length | 0.3 in |
| Package Name | 6-DIP |
| Package Width | 7.62 mm |
| Turn Off Time (Max) | 45 µs |
| Turn On Time (Typ) | 45 µs |
| Voltage - Forward (Vf) (Typ) | 1.3 V |
| Voltage - Isolation | 4170 Vrms |
| Voltage - Output (Max) | 15 V |
Pricing
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CAD
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Documents
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