MBR6060PTHC0G

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Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 60V 60A TO247AD

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Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 60V 60A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	MBR6060PTHC0G

Current - Average Rectified (Io) (per Diode)	60 A
Current - Reverse Leakage @ Vr	1 mA
Diode Configuration	1 Pair Common Cathode
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD (TO-3P)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	930 mV

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Grade	Current - Reverse Leakage @ Vr	Qualification	Mounting Type	Diode Configuration	Speed	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation MBR6060PTHC0G	TO-247AD (TO-3P)	60 V	150 °C	-55 °C	60 A	Automotive	1 mA	AEC-Q101	Through Hole	1 Pair Common Cathode	200 mA 500 ns	Schottky	TO-247-3	930 mV
Taiwan Semiconductor Corporation MBR6060PT	TO-247AD (TO-3P)	60 V	150 °C	-55 °C	60 A		1 mA		Through Hole	1 Pair Common Cathode	200 mA 500 ns	Schottky	TO-247-3	930 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 60 V 60A Through Hole TO-247-3

Technical documentation and resources

No documents available