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2N2907AUB1

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STMicroelectronics

RAD-HARD 60 V, 0.6 A PNP TRANSISTOR

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DocumentsTN1352+6

2N2907AUB1

Active
STMicroelectronics

RAD-HARD 60 V, 0.6 A PNP TRANSISTOR

Deep-Dive with AI

DocumentsTN1352+6

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification2N2907AUB12N2907AHR Series
--
Current - Collector (Ic) (Max) [Max]500 mA500 mA
Current - Collector Cutoff (Max) [Max]50 nA50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100100
Mounting TypeSurface MountSurface Mount
Package / Case3-SMD, No Lead3-SMD, No Lead
Power - Max [Max]1.8 W1.8 W
Supplier Device PackageUBUB
Transistor TypePNPPNP
Vce Saturation (Max) @ Ib, Ic1.6 V1.6 V
Voltage - Collector Emitter Breakdown (Max)60 V60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 112.74
10$ 107.41
25$ 105.12
80$ 99.79

2N2907AHR Series

Rad-Hard 60 V, 0.6 A PNP transistor

PartVoltage - Collector Emitter Breakdown (Max)Package / CaseDC Current Gain (hFE) (Min) @ Ic, Vce [Min]Vce Saturation (Max) @ Ib, IcTransistor TypeCurrent - Collector Cutoff (Max) [Max]Current - Collector (Ic) (Max) [Max]Mounting TypePower - Max [Max]Supplier Device Package
STMicroelectronics
SOC2907A1
STMicroelectronics
2N2907AUBT
STMicroelectronics
SOC2907A1
STMicroelectronics
2N2907AUBG
STMicroelectronics
2N2907ARUBG
STMicroelectronics
2N2907AUB1
STMicroelectronics
SOC2907ARHRG
STMicroelectronics
2N2907AUB1
60 V
3-SMD, No Lead
100
1.6 V
PNP
50 nA
500 mA
Surface Mount
1.8 W
UB
STMicroelectronics
2N2907ARUBT
STMicroelectronics
SOC2907AHRG
STMicroelectronics
SOC2907ARHRT
STMicroelectronics
SOC2907AHRT

Description

General part information

2N2907AHR Series

The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).

Qualified as per ESCC 5202/001 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.

In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.