SF38G A0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO201AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SF38G A0G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Supplier Device Package	Mounting Type	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation SF38G	150 °C	-55 °C	600 V	200 mA 500 ns	Standard	60 pF	5 µA	3 A	DO-201AD Axial	DO-201AD	Through Hole	35 ns	1.7 V
Taiwan Semiconductor Corporation SF38G B0G	150 °C	-55 °C	600 V	200 mA 500 ns	Standard	60 pF	5 µA	3 A	DO-201AD Axial	DO-201AD	Through Hole	35 ns	1.7 V
Taiwan Semiconductor Corporation SF38G A0G	150 °C	-55 °C	600 V	200 mA 500 ns	Standard	60 pF	5 µA	3 A	DO-201AD Axial	DO-201AD	Through Hole	35 ns	1.7 V

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General part information

Diode 600 V 3A Through Hole DO-201AD

Technical documentation and resources