IRFP450PBF

Obsolete

Infineon Technologies

MOSFET N-CH 500V 14A TO247AC

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Obsolete

Infineon Technologies

MOSFET N-CH 500V 14A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP450PBF

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IRFP450PBF	20 V	14 A	500 V	TO-247-3	400 mOhm	10 V	MOSFET (Metal Oxide)	TO-247AC	4 V	N-Channel	2600 pF	190 W	Through Hole	150 nC	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 14A (Tc) 190W (Tc) Through Hole TO-247AC

Technical documentation and resources

No documents available