NTJD4401NT2G
ObsoleteDUAL N-CHANNEL SMALL SIGNAL MOSFET WITH ESD PROTECTION 20V 630MA 375MΩ
NTJD4401NT2G
ObsoleteDUAL N-CHANNEL SMALL SIGNAL MOSFET WITH ESD PROTECTION 20V 630MA 375MΩ
Description
General part information
NTJD4401NT2G
This N-Channel dual device was designed with a small footprint package (2x2 mm) with ON Semiconductor's leading planar process for small footprint and increased efficiency. The low figure of merit is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.
Technical Specifications
Parameters and characteristics for this part
| Specification | NTJD4401NT2G |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 630 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 3 nC |
| Input Capacitance (Ciss) (Max) | 46 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | SC-88/SC70-6/SOT-363 |
| Power - Max | 270 mW |
| Rds On (Max) | 375 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.5 V |
Pricing
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