WNSCM80120RQ

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WeEn Semiconductors

WNSCM80120R/TO247-4L/STANDARD MA

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WeEn Semiconductors

WNSCM80120R/TO247-4L/STANDARD MA

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	WNSCM80120RQ	WNSCM80120 Series

Current - Continuous Drain (Id) @ 25°C	45 A	42 - 45 A
Drain to Source Voltage (Vdss)	1200 V	1200 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	59 nC	59 nC
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	175 ░C	175 ░C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-4	TO-247-3, TO-247-4
Power Dissipation (Max)	270 W	230 - 270 W
Rds On (Max) @ Id, Vgs	98 mOhm	98 mOhm
Supplier Device Package	TO-247-4L	TO-247-3, TO-247-4L
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max) [Max]	25 V	25 V
Vgs (Max) [Min]	-10 V	-10 V
Vgs(th) (Max) @ Id	4.5 V	4.5 V

WNSCM80120W/TO-247/STANDARD MARK

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max) [Min]	Vgs (Max) [Max]
WeEn Semiconductors WNSCM80120WQ	Through Hole	42 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	59 nC	230 W	N-Channel	TO-247-3	1200 V	4.5 V	98 mOhm	TO-247-3	-10 V	25 V
WeEn Semiconductors WNSCM80120RQ	Through Hole	45 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	59 nC	270 W	N-Channel	TO-247-4	1200 V	4.5 V	98 mOhm	TO-247-4L	-10 V	25 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	480	$ 9.08

General part information

N-Channel 1200 V 45A (Ta) 270W (Ta) Through Hole TO-247-4L

Technical documentation and resources

No documents available