NVD5802NT4G-VF01
ObsoleteON Semiconductor
POWER MOSFET 40V, 101A, 4.4 MOHM, SINGLE N-CHANNEL, DPAK.
NVD5802NT4G-VF01
ObsoleteON Semiconductor
POWER MOSFET 40V, 101A, 4.4 MOHM, SINGLE N-CHANNEL, DPAK.
Description
General part information
NVD5802NT4G-VF01
Automotive Power MOSFET. 40V, 101A, 4.4 mOhm, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVD5802NT4G-VF01 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 16.4 A |
| Current - Continuous Drain (Id) (Tc) | 101 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 100 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 5300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power Dissipation (Max) | 2.5 W, 93.75 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 4.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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CAD
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Documents
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