FDB150N10
ObsoleteON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 100V, 57A, 15MΩ
FDB150N10
ObsoleteON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 100V, 57A, 15MΩ
Description
General part information
FDB150N10
This N-Channel MOSFET is produced using a PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDB150N10 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 57 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 69 nC |
| Input Capacitance (Ciss) (Max) | 4760 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263 (D2PAK) |
| Power Dissipation (Max) | 110 W |
| Rds On (Max) | 15 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
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Documents
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