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RBEF009012R00KDB00

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Vishay General Semiconductor - Diodes Division

RES CHAS MNT 12 OHM 10% 90W

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RBEF009012R00KDB00

Active
Vishay General Semiconductor - Diodes Division

RES CHAS MNT 12 OHM 10% 90W

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationRBEF009012R00KDB00
Coating, Housing TypeVitreous Enamel Coated
CompositionWirewound
FeaturesPulse Withstanding
Lead StyleSolder Lugs
Mounting FeatureBrackets (not included)
Operating Temperature [Max]415 °C
Operating Temperature [Min]-55 °C
Package / CaseRadial, Tubular
Power (Watts)90 W
Resistance12 Ohms
Size / Dimension [diameter]14.29 mm
Size / Dimension [diameter]0.563 "
Size / Dimension [x]4 in
Size / Dimension [x]101.6 mm
Tolerance10 %

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 387.84
NewarkEach 1$ 377.52
5$ 372.24
10$ 366.96
25$ 345.84

Description

General part information

RBEF009012R00KDB00

12 Ohms ±10% 90W Wirewound Chassis Mount Resistor

Documents

Technical documentation and resources