1N4001-G

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Comchip Technology

DIODE GEN PURP 50V 1A DO41

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Comchip Technology

DIODE GEN PURP 50V 1A DO41

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1N4001-G	1N4001 Series

Capacitance @ Vr, F	15 pF	15 pF
Current - Average Rectified (Io)	1 A	1 A
Current - Reverse Leakage @ Vr	5 µA	5 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	150 °C	150 °C
Operating Temperature - Junction [Min]	-55 °C	-55 °C
Package / Case	DO-204AL, DO-41, Axial	DO-204AL, DO-41, Axial
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	DO-41	DO-41
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V	50 V
Voltage - Forward (Vf) (Max) @ If	1.1 V	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DIODE GEN PURP 50V 1A DO41

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Speed	Mounting Type	Current - Average Rectified (Io)	Capacitance @ Vr, F	Supplier Device Package	Current - Reverse Leakage @ Vr
Comchip Technology 1N4001-G	150 °C	-55 °C	1.1 V	Axial, DO-204AL, DO-41	50 V	Standard	Standard Recovery >500ns	200 mA	Through Hole	1 A	15 pF	DO-41	5 µA
Comchip Technology 1N4001B-G	150 °C	-55 °C	1.1 V	Axial, DO-204AL, DO-41	50 V	Standard	Standard Recovery >500ns	200 mA	Through Hole	1 A	15 pF	DO-41	5 µA

General part information

Diode 50 V 1A Through Hole DO-41

Technical documentation and resources

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