CQY37N

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Vishay General Semiconductor - Diodes Division

EMITTER IR 950NM 100MA RADIAL

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Vishay General Semiconductor - Diodes Division

EMITTER IR 950NM 100MA RADIAL

Technical Specifications

Parameters and characteristics for this part

Specification	CQY37N

Current - DC Forward (If) (Max) [Max]	100 mA
Mounting Type	Through Hole
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-25 °C
Orientation	Top View
Package / Case	Radial
Package / Case	1.8 mm
Radiant Intensity (Ie) Min @ If [Min]	2.2 mW/sr
Type	Infrared (IR)
Viewing Angle	24 °
Voltage - Forward (Vf) (Typ)	1.3 V
Wavelength	950 nm

Part	Orientation	Wavelength	Package / Case	Package / Case	Voltage - Forward (Vf) (Typ)	Viewing Angle	Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Current - DC Forward (If) (Max) [Max]	Radiant Intensity (Ie) Min @ If [Min]
Vishay General Semiconductor - Diodes Division CQY37N	Top View	950 nm	Radial	1.8 mm	1.3 V	24 °	Infrared (IR)	85 C	-25 °C	Through Hole	100 mA	2.2 mW/sr

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General part information

Infrared (IR) Emitter 950nm 1.3V 100mA 2.2mW/sr @ 50mA 24° Radial, 1.8mm (T-3/4)

Technical documentation and resources