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DMTH4001STLW-13

DMTH4001STLW-13

Active
Diodes Inc

40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI1012-8 (TOLL)

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DMTH4001STLW-13

DMTH4001STLW-13

Active
Diodes Inc

40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI1012-8 (TOLL)

Find alt

Description

General part information

DMTH4001STLW Series

This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH4001STLW-13
Current - Continuous Drain (Id) (Tc)300 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)150 nC
Input Capacitance (Ciss) (Max)13185 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerSFN
Package NamePOWERDI1012-8
Power Dissipation (Max)6 W, 300 W
Rds On (Max)0.85 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources