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FDMS0302S

FDMS0302S

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET™ 30V, 49A, 1.9MΩ

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FDMS0302S

FDMS0302S

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> SYNCFET™ 30V, 49A, 1.9MΩ

Find alt

Description

General part information

FDMS0302S

The FDMS0302S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS0302S
Current - Continuous Drain (Id) (Ta)29 A
Current - Continuous Drain (Id) (Tc)49 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)109 nC
Input Capacitance (Ciss) (Max)7350 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package Length5 mm
Package Name8-PQFN
Package Width6 mm
Power Dissipation (Max)2.5 W, 89 W
Rds On (Max)1.9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources