DMJ70H1D5SV3
ObsoleteDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
DMJ70H1D5SV3
ObsoleteDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMJ70H1D5SV3
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMJ70H1D5SV3 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 5 A |
| Drain to Source Voltage (Vdss) | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 9.8 nC |
| Input Capacitance (Ciss) (Max) | 316 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Package Name | TO-251 (Type TH3) |
| Power Dissipation (Max) | 78 W |
| Rds On (Max) | 1.5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources