DMN3032LQ-7
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3032LQ-7
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMN3032LQ-7
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN3032LQ-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 5.4 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 10.1 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 481 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power Dissipation (Max) | 800 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) | 31 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources