Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TD9944TG-G | TD9944 Series |
|---|---|---|
| Configuration | - | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | - | 240 V |
| Input Capacitance (Ciss) (Max) @ Vds | - | 125 pF |
| Mounting Type | - | Surface Mount |
| null | - | |
| Operating Temperature | - | -55 °C |
| Operating Temperature | - | 150 °C |
| Package / Case | - | 8-SOIC |
| Package / Case | - | 3.9 mm |
| Package / Case | - | 0.154 in |
| Rds On (Max) @ Id, Vgs | - | 6 Ohm |
| Supplier Device Package | - | 8-SOIC |
| Technology | - | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | - | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.89 | |
| 25 | $ 1.57 | |||
| 100 | $ 1.43 | |||
| Digi-Reel® | 1 | $ 1.89 | ||
| 25 | $ 1.57 | |||
| 100 | $ 1.43 | |||
| Tape & Reel (TR) | 3300 | $ 1.43 | ||
| Microchip Direct | T/R | 1 | $ 1.89 | |
| 25 | $ 1.57 | |||
| 100 | $ 1.43 | |||
| 1000 | $ 1.37 | |||
| 5000 | $ 1.36 | |||
TD9944 Series
240V, 6.0 Ohm, Dual N-Channel, Enhancement-Mode, Vertical DMOS FET
| Part | Configuration | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TD9944TG-G | |||||||||||||
Microchip Technology TD9944TG-G | 2 N-Channel (Dual) | 8-SOIC | MOSFET (Metal Oxide) | -55 °C | 150 °C | 2 V | 240 V | 125 pF | 6 Ohm | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in |
Description
General part information
TD9944 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources