Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | D45H11 | D45H11 Series |
|---|---|---|
| - | - | |
| Current - Collector Cutoff (Max) [Max] | 10 µA | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 hFE | 40 hFE |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | 150 °C | 150 °C |
| Package / Case | TO-220-3 | TO-220-3 |
| Power - Max [Max] | 50 W | 50 W |
| Supplier Device Package | TO-220 | TO-220 |
| Transistor Type | PNP | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1 V | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
D45H11 Series
Low voltage PNP power transistor
| Part | Current - Collector Cutoff (Max) [Max] | Operating Temperature | Mounting Type | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Power - Max [Max] | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics D45H11 | ||||||||||
STMicroelectronics D45H11 | 10 µA | 150 °C | Through Hole | 1 V | TO-220 | 50 W | PNP | 80 V | 40 hFE | TO-220-3 |
STMicroelectronics D45H11 | ||||||||||
STMicroelectronics D45H11 |
Description
General part information
D45H11 Series
The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications
Documents
Technical documentation and resources