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DMT10H025LK3-13

DMT10H025LK3-13

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Diodes Inc

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT10H025LK3-13

DMT10H025LK3-13

Active
Diodes Inc

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMT10H025LK3-13

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT10H025LK3-13
Current - Continuous Drain (Id) (Tc)47.2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)21 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1477 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252 (DPAK)
Power Dissipation (Max)2.6 W
QualificationAEC-Q101
Rds On (Max)22 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

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Documents

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