STU16N60M2

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STMicroelectronics

MOSFET N-CH 600V 12A IPAK

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STMicroelectronics

MOSFET N-CH 600V 12A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU16N60M2

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	320 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 600V 12A IPAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	FET Type	Mounting Type
STMicroelectronics STU16N60M2	700 pF	320 mOhm	110 W	25 V	12 A	10 V	19 nC	TO-251 (IPAK)	150 °C	MOSFET (Metal Oxide)	600 V	4 V	IPAK, TO-251-3 Short Leads, TO-251AA	N-Channel	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 12A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources

No documents available