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NJVMJD31T4G

NJVMJD31T4G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 3 A, 15 W, TO-252 (DPAK), SURFACE MOUNT

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NJVMJD31T4G

NJVMJD31T4G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 3 A, 15 W, TO-252 (DPAK), SURFACE MOUNT

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Description

General part information

NJVMJD31T4G

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (1G"Suffix)

Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix)

Technical Specifications

Parameters and characteristics for this part

SpecificationNJVMJD31T4G
Current - Collector (Ic) (Max)3 A
Current - Collector Cutoff (Max)50 µA
DC Current Gain (hFE) (Min)10
Frequency - Transition3 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power - Max1.56 W
Transistor TypeNPN
Vce Saturation (Max)1.2 V
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

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CAD

3D models and CAD resources for this part