ACGRAS1W-HF

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Comchip Technology

DIODE GEN PURP 1.6KV 1A DO214AC

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Comchip Technology

DIODE GEN PURP 1.6KV 1A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	ACGRAS1W-HF

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Qualification	AEC-Q101
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.2 V

DIODE GEN PURP 1.6KV 1A DO214AC

Part	Qualification	Package / Case	Grade	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Supplier Device Package	Technology	Speed	Speed	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Comchip Technology ACGRAS1W-HF	AEC-Q101	DO-214AC, SMA	Automotive	1 A	1.2 V	5 µA	10 pF	DO-214AC (SMA)	Standard	Standard Recovery >500ns	200 mA	Surface Mount	150 °C	-55 °C

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General part information

Diode 1600 V 1A Surface Mount DO-214AC (SMA)

Technical documentation and resources

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