
BD239CTU
ObsoleteON Semiconductor
NPN EPITAXIAL SILICON TRANSISTOR

BD239CTU
ObsoleteON Semiconductor
NPN EPITAXIAL SILICON TRANSISTOR
Description
General part information
BD239C Series
NPN Epitaxial Silicon Transistor
Technical Specifications
Parameters and characteristics for this part
| Specification | BD239CTU |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 300 µA |
| DC Current Gain (hFE) (Min) | 15 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220-3 |
| Power - Max | 30 W |
| Transistor Type | NPN |
| Vce Saturation (Max) | 700 mV |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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CAD
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Documents
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