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BD239CTU

BD239CTU

Obsolete
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

Find alt
BD239CTU

BD239CTU

Obsolete
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

Find alt

Description

General part information

BD239C Series

NPN Epitaxial Silicon Transistor

Technical Specifications

Parameters and characteristics for this part

SpecificationBD239CTU
Current - Collector (Ic) (Max)2 A
Current - Collector Cutoff (Max)300 µA
DC Current Gain (hFE) (Min)15
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Package NameTO-220-3
Power - Max30 W
Transistor TypeNPN
Vce Saturation (Max)700 mV
Voltage - Collector Emitter Breakdown (Max)100 V

Pricing

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CAD

3D models and CAD resources for this part