FDP8860
ObsoleteON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 80A, 2.5MΩ
FDP8860
ObsoleteON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 80A, 2.5MΩ
Description
General part information
FDP8860
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on)and fast switching speed.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDP8860 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 80 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 222 nC |
| Input Capacitance (Ciss) (Max) | 12240 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 155 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220-3 |
| Power Dissipation (Max) | 254 W |
| Rds On (Max) | 2.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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Documents
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