2SK3814-Z-E1-AZ

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Renesas Electronics Corporation

NCH SINGLE POWER MOSFET 60V 60A 8.7MOHM MP-3Z/TO-252

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Renesas Electronics Corporation

NCH SINGLE POWER MOSFET 60V 60A 8.7MOHM MP-3Z/TO-252

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3814-Z-E1-AZ

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	84 W
Rds On (Max) @ Id, Vgs [Max]	8.7 mOhm
Supplier Device Package	TO-252 (MP-3Z)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Nch Single Power Mosfet 60V 60A 8.7Mohm Mp-3Z/To-252

Part	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case
Renesas Electronics Corporation 2SK3814-Z-E1-AZ	MOSFET (Metal Oxide)	20 V	60 V	2.5 V	84 W	TO-252 (MP-3Z)	8.7 mOhm	95 nC	60 A	150 °C	5450 pF	Surface Mount	4.5 V, 10 V	N-Channel	DPAK (2 Leads + Tab), SC-63, TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Technical documentation and resources