DMN2023UCB4-7

Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Search across all available documentation for this part.

Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2023UCB4-7

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	24 V
Gate Charge (Qg) (Max) @ Vgs [Max]	37 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3333 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	WLBGA, 4-XFBGA
Power - Max [Max]	1.45 W
Qualification	AEC-Q101
Supplier Device Package	X1-WLB1818-4
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

N-Channel MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power - Max [Max]	Configuration	Grade	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Diodes Inc DMN2023UCB4-7	-55 °C	150 °C	X1-WLB1818-4	1.45 W	2 N-Channel (Dual) Common Drain	Automotive	24 V	MOSFET (Metal Oxide)	37 nC	4-XFBGA WLBGA	1.3 V	6 A	AEC-Q101	3333 pF	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel MOSFET

Technical documentation and resources