VN2210N2
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 0.35 OHM 3 TO-39 BAG ROHS COMPLIANT: YES
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VN2210N2
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 0.35 OHM 3 TO-39 BAG ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | VN2210N2 | VN2210 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 1.7 A | 1.7 A |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V | 5 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF | 500 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-39-3 Metal Can, TO-205AD | TO-39-3 Metal Can, TO-205AD |
| Power Dissipation (Max) | 360 mW | 360 mW |
| Rds On (Max) @ Id, Vgs | 350 mOhm | 350 mOhm |
| Supplier Device Package | TO-39 | TO-39 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2.4 V | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 1 | $ 16.87 | |
| 25 | $ 15.47 | |||
| 100 | $ 14.01 | |||
| Microchip Direct | BAG | 1 | $ 16.87 | |
| 25 | $ 15.47 | |||
| 100 | $ 14.01 | |||
| 1000 | $ 12.89 | |||
| 5000 | $ 12.26 | |||
| 10000 | $ 11.68 | |||
| Newark | Each | 100 | $ 14.01 | |
VN2210 Series
MOSFET, N-Channel Enhancement-Mode, 100V, 0.35 Ohm
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Vgs (Max) | Technology | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Package / Case | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology VN2210N2 | ||||||||||||||||
Microchip Technology VN2210N2 | ||||||||||||||||
Microchip Technology VN2210N2 | 350 mOhm | 1.7 A | N-Channel | -55 °C | 150 °C | 100 V | TO-39 | Through Hole | 20 V | MOSFET (Metal Oxide) | 2.4 V | 500 pF | 10 V | 5 V | TO-205AD, TO-39-3 Metal Can | 360 mW |
Microchip Technology VN2210N3-G |
Description
General part information
VN2210 Series
VN2210 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.