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NSVBC123JDXV6T5G

NSVBC123JDXV6T5G

Obsolete
ON Semiconductor

DUAL NPN BIPOLAR DIGITAL TRANSISTOR (BRT)

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NSVBC123JDXV6T5G

NSVBC123JDXV6T5G

Obsolete
ON Semiconductor

DUAL NPN BIPOLAR DIGITAL TRANSISTOR (BRT)

Find alt

Description

General part information

NSBC123JDXV6 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Technical Specifications

Parameters and characteristics for this part

SpecificationNSVBC123JDXV6T5G
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)80
GradeAutomotive
Mounting TypeSurface Mount
NPN Count2
Package / CaseSOT-563, SOT-666
Package NameSOT-563
Power - Max0.5 W
QualificationAEC-Q101
Resistor - Base (R1) Resistance2.2 kOhm
Resistor - Emitter Base (R2)47 kOhm
Transistor ConfigurationDual, Pre-Biased
Transistor TypeNPN
Vce Saturation (Max)250 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part