
NSVBC123JDXV6T5G
ObsoleteDUAL NPN BIPOLAR DIGITAL TRANSISTOR (BRT)

NSVBC123JDXV6T5G
ObsoleteDUAL NPN BIPOLAR DIGITAL TRANSISTOR (BRT)
Description
General part information
NSBC123JDXV6 Series
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Technical Specifications
Parameters and characteristics for this part
| Specification | NSVBC123JDXV6T5G |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 80 |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| NPN Count | 2 |
| Package / Case | SOT-563, SOT-666 |
| Package Name | SOT-563 |
| Power - Max | 0.5 W |
| Qualification | AEC-Q101 |
| Resistor - Base (R1) Resistance | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 47 kOhm |
| Transistor Configuration | Dual, Pre-Biased |
| Transistor Type | NPN |
| Vce Saturation (Max) | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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CAD
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Documents
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