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NLAS3699BMN1R2G

NLAS3699BMN1R2G

Obsolete
ON Semiconductor

ANALOG SWITCH, DUAL DPDT, ULTRA-LOW RON

Find alt
NLAS3699BMN1R2G

NLAS3699BMN1R2G

Obsolete
ON Semiconductor

ANALOG SWITCH, DUAL DPDT, ULTRA-LOW RON

Find alt

Description

General part information

NLAS3699BMN1R2G

The NLAS3699B is a dual independent ultra low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699B can handle a balanced microphone, speaker, ring tone generator in a monophone mode. The device contains a Break Before Make feature.

Technical Specifications

Parameters and characteristics for this part

SpecificationNLAS3699BMN1R2G
-3db Bandwidth20 MHz
Channel Capacitance (CD(off))7 pF
Channel Capacitance (CS(off))7 pF
Channel-to-Channel Matching (ΔRon)50 mOhm
Charge Injection50 pC
Crosstalk-62 dB
Current - Leakage (Max)500 nA
Demultiplexer Outputs2
Mounting TypeSurface Mount
Multiplexer Inputs2
Number of Circuits2
On-State Resistance (Max)550 mOhm
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case16-VFQFN Exposed Pad
Package Length3 mm
Package Name16-QFN
Package Width3 mm
Switch Circuit TypeDPDT
Switch Time Toff (Max)50 ns
Switch Time Ton (Max)50 ns
Voltage - Supply, Single (V+) (Maximum)4.5 V
Voltage - Supply, Single (V+) (Minimum)1.65 V

Pricing

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CAD

3D models and CAD resources for this part