NXH040P120MNF1PG
ActiveON Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 30 A, 1.2 KV, 0.042 OHM, MODULE
NXH040P120MNF1PG
ActiveON Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 30 A, 1.2 KV, 0.042 OHM, MODULE
Description
General part information
NXH040P120MNF1PG
The NXH040P120MNF1 is a SiC MOSFET module containing a 40 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.
Technical Specifications
Parameters and characteristics for this part
| Specification | NXH040P120MNF1PG |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Half Bridge, Dual |
| Current - Continuous Drain (Id) (Tc) | 30 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Max) | 122.1 nC |
| Input Capacitance (Ciss) (Max) | 1505 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | Module |
| Power - Max | 74 VA |
| Rds On (Max) | 56 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) | 4.3 V |
Pricing
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